Guizhou Yuanmiao Automation Equipment Co., Ltd.: 1Yr

Anshun, Guizhou, China; Main products: ABB Triconex Foxboro LAM, Bentley Motorola Schneider, Kollmorgen HIMA ALSTOM, Reliance GE HONEYWELL NI、ICS

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Home > Products > ABB > ABB 5SHY3545L0014 3BHE023784R0001 IGCT Module

ABB 5SHY3545L0014 3BHE023784R0001 IGCT Module

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Product Details

Material	Other, Global universal model	Condition	Other, Global universal model
Task	Other, Global universal model	Mathematical Model	Other
Signal	Other, Global universal model	Customized	Non-Customized
Structure	Other, Global universal model

Product Description

ABB 5SHY3545L0010 3BHE009681R0101 High-Voltage Thyristor Module

Functional Characteristics

Abundant Interfaces: Supports access to devices such as Ethernet, serial ports, CAN ports, and IO ports, as well as Ethernet and 2G/3G/4G full-network communication access. It enables convenient connection and data interaction with various external devices.
Extensive Protocol Support: Embeds hundreds of industrial protocols, supporting access to over 99% of PLCs and most industrial devices. It has strong compatibility and versatility, adapting to different industrial control systems.
Storage and Caching: Features 8GB of local storage with SD card expansion, supporting local data caching and offline applications. This ensures the normal operation of critical services even during network interruptions or other anomalies.
Multiple Serial Port Support: A triple-in-one serial port supports three electrical interfaces: RS485/RS232/RS422, meeting the connection needs of different serial port devices.
Edge Computing Capability: Supports edge computing to implement data optimization, real-time response, agile connection, and model analysis at IoT edge nodes. This effectively shares cloud computing resources and supports simultaneous access to multiple devices, improving overall system operation efficiency and response speed.
Wide Voltage Input: Supports wide voltage input of DC9-36V, adapting to various complex industrial power environments. This reduces power requirements and enhances device stability and reliability.
Other Functions: Supports LED light customization, gateway health self-diagnosis, multiple standard VPNs, network primary-backup modes, remote control, multi-link concurrent data collection, 4G traffic detail analysis and control, gateway remote management, network self-recovery, base station and GPS hybrid positioning modes, local WEB GPS location presentation, local WEB point table configuration, and local configuration design and presentation. These rich functions meet diverse needs in industrial automation scenarios.

Electrical Parameters1. Voltage and Current Parameters

Parameter Name	Value/Description
Repetitive Peak Off-State Voltage	$V_{DRM} = 4500 V$ (Withstand voltage class: 4.5kV)
Average On-State Current	$I_{TGM} = 3500 A$ (Average current during continuous conduction)
Asymmetrical Characteristics	Belongs to an asymmetrical thyristor structure, suitable for high-frequency applications requiring fast turn-off

2. Switching Characteristics

Switching Frequency: Optimized for medium-frequency (MF) applications, supporting higher-frequency switching operations (specific range refer to the manual).
Snubberless Turn-off Capability: Features a high snubberless turn-off rating, enabling reliable turn-off without additional snubber circuits and simplifying circuit design.

3. Control and Interfaces

Gate Control: Achieves precise triggering through an integrated gate driver, supporting a simple control interface with status feedback.
Power Compatibility: Can be driven by alternating current (AC) or direct current (DC) power supplies.

Performance and Technical Advantages

High Power Density: Adopts an IGBT-like structure to reduce on-state losses and enhance power processing capability per unit volume.
Reliability:

Advanced packaging technologies (such as ceramic substrates and pressure contacts) ensure long-term stable operation.
High electromagnetic compatibility (EMC) suitable for complex electromagnetic environments.
Flexibility:
Supports series connection for scalable use in higher voltage level systems (e.g., multilevel converters).
Compatible with ABB's drive and monitoring systems for easy parameter debugging and system integration.

Working Principle of ABB 5SHY3545L0014 (IGCT)1. Conduction Phase (Triggering Process)

Initial State: The IGCT is in the off-state, with a forward voltage applied between the anode and cathode (anode potential higher than cathode). Internal PN junctions (J1, J3 junctions) are reverse-biased, and the J2 junction is forward-biased, blocking current.
Triggering Condition: A positive pulse signal (positive relative to the cathode) is applied to the gate, injecting electrons into the gate region and triggering the following chain reaction:

Gate electron injection forward-biases the J3 junction (N+P), causing electrons in the N base region to diffuse into the P base region.
Holes in the P base region are injected into the N-drift region, forming carrier recombination, which reduces the reverse-biased voltage of the J2 junction.
When the carrier concentration is sufficiently high, the PNPN structure enters a positive feedback conduction state, the anode current rises rapidly, and the IGCT turns on.

Features:

Triggering requires only low-power pulses (similar to the voltage-driven IGBT, superior to the high-current-driven GTO).
Fast conduction speed, suitable for high-frequency switching scenarios.

2. Conduction Maintenance Phase

Conduction State: The IGCT is equivalent to a low-resistance state, with the anode current determined by external circuits (e.g., power supply, load). The gate signal can be removed.
Current Path: Anode current flows to the cathode through the N-drift region (lightly doped, high voltage withstand), with a low on-state voltage drop (optimized based on IGBT-like structure to reduce on-state resistance).
Loss Control:

On-state losses mainly come from resistance heating in the N-drift region, reduced through high-power density designs (e.g., thin base region technology).
No continuous gate drive power is required, with lower energy consumption than GTO.

3. Turn-off Phase (Commutation Process)

Turn-off Condition: A negative pulse signal (or pulling low to the cathode potential) is applied to the gate to extract carriers from the gate region and disrupt the PNPN positive feedback mechanism.
Key Processes:

Carrier Extraction: Negative gate voltage extracts holes from the P base region, reducing excess carriers in the N-drift region.
Current Decay: As the carrier concentration decreases, the anode current drops rapidly, generating a turn-off voltage ( $d V / d t$ ) across the device.
Voltage Re-establishment: When the current drops to near zero, the IGCT restores blocking capability, and the anode voltage recovers to the supply voltage.

Technical Advantages:

Snubberless Turn-off Capability: Fast turn-off without additional RC snubber circuits through optimized gate drive and chip structure, reducing circuit complexity.
Soft Turn-off Characteristics: Reduces turn-off losses and voltage spikes, suitable for high-frequency applications (e.g., medium-frequency power supplies).

Company Profile

Guizhou Yuanmiao Automation Equipment Co., Ltd.

Main products: Covering globally renowned brands: Bently Nevada, Triconex, Woodward, Foxboro, Westinghouse, Reliance, Schneider Modicon, ABB, AB (Allen-Bradley), Motorola, GE Fanuc, Yaskawa, Bosch Rexroth Rexroth, ACSO, YOKOGAWA, Rexroth, NI, ICS Triplex, Kollmorgen, Mitsubishi, MOOG, Emerson, B&R B&r, SST, ALSTOM, KUKA EPRO, LAM HIMA dark Horse, HONEYWELL, prosoft, AMAT, SIEMENS, etc. The product categories include: DCS system accessories, robot system spare parts, large servo system spare parts, etc., which are widely used in power, chemical, metallurgy, intelligent manufacturing and other fields.

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Guizhou Yuanmiao Automation Equipment Co., Ltd.: Contact nameyezi
Chat Now; AddressXixiu District, Anshun, Guizhou

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Product Categories

ABB	Bently Nevada	TRICONEX	GE
ICS Triplex	HIMA	MOTOROLA	WOODWARD
HONEYWELL	Foxboro	Schneider Modicon	YOKOGAWA
EPRO	MOOG	Westinghouse	Reliance
Emerson	B&R	ALSTOM	LAM
KONGSBERG	FANUC	National Instruments	Kollmorgen
Other Brands	Rexroth	PROSOFT	Vibro-meter
Allen-Bradley	ZYGO	Praxis	METSO

ABB 5SHY3545L0014 3BHE023784R0001 IGCT Module

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